Push-Pull Archetype of Reduced Graphene Oxide Functionalized with Polyfluorene for Nonvolatile Rewritable Memory
Identifieur interne : 000432 ( Chine/Analysis ); précédent : 000431; suivant : 000433Push-Pull Archetype of Reduced Graphene Oxide Functionalized with Polyfluorene for Nonvolatile Rewritable Memory
Auteurs : RBID : Pascal:12-0112960Descripteurs français
- Pascal (Inist)
- Fluorène dérivé copolymère, Amine copolymère, Copolymère conjugué, Copolymère aromatique, Polymère greffé, Préparation, Polycondensation solution, Copolycondensation, Copulation Suzuki, Copulation chimique, Réaction surface, Solution organique, Spectre absorption, Photoluminescence, Transfert charge intramoléculaire, Dispositif à mémoire, Mémoire non volatile, Couche ITO, Caractéristique courant tension, Etude expérimentale, Triphénylamine dérivé copolymère, Fluorène(9,9-bis[4-(diphénylamino)phényl]) copolymère, Fluorène(9,9-dihexyl) copolymère, Oxyde de graphène réduit.
English descriptors
- KwdEn :
- Absorption spectrum, Amine copolymer, Aromatic copolymer, Chemical coupling, Conjugated copolymer, Copolycondensation, Experimental study, Fluorene derivative copolymer, Graft polymers, ITO layers, Intramolecular charge transfer, Memory devices, Non volatile memory, Organic solution, Photoluminescence, Preparation, Solution polycondensation, Surface reaction, Suzuki coupling, Voltage current curve.
Abstract
A solution-processable PFTPA-convalently grafted reduced graphene oxide (RGO-PFTPA) was synthesized by the 1,3-dipolar cycloaddition of azomethine ylide. Bistable electrical switching and nonvolatile rewritable memory effects were demonstrated in a sandwich structure of indium tin oxide/ RGO-PFTPA/AI. The switch-on voltage of the as-fabricated device was around -1.4 V, and the ON/OFF-state current ratio was more than 103. The ON-OFF transition process is reversible because the application of a high enough positive voltage can induce the reverse transfer of electrons, reducing the conductivity back to its initial OFF state. Both the OFF and ON states are accessible and very stable under a constant voltage stress of -1 V for up to 3 h, or under a pulse voltage stress of -1 V for up to 108 continuous read cycles (pulse period = 2 μs, pulse width = 1 μs).
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Pascal:12-0112960Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Push-Pull Archetype of Reduced Graphene Oxide Functionalized with Polyfluorene for Nonvolatile Rewritable Memory</title><author><name>BIN ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shanghai Key Laboratory of Functional Materials Chemistry, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road</s1><s2>Shanghai 200237</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200237</wicri:noRegion></affiliation></author><author><name>YU CHEN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shanghai Key Laboratory of Functional Materials Chemistry, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road</s1><s2>Shanghai 200237</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200237</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>The State Key Laboratory of ASIC & System, Fudan University, 220 Handan Road</s1><s2>Shanghai 200433</s2><s3>CHN</s3><sZ>2 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200433</wicri:noRegion></affiliation></author><author><name>GANG LIU</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge</s1><s2>Singapore 119260</s2><s3>SGP</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 119260</wicri:noRegion></affiliation></author><author><name sortKey="Xu, Li Qun" uniqKey="Xu L">Li-Qun Xu</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge</s1><s2>Singapore 119260</s2><s3>SGP</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 119260</wicri:noRegion></affiliation></author><author><name>JUNNENG CHEN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shanghai Key Laboratory of Functional Materials Chemistry, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road</s1><s2>Shanghai 200237</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200237</wicri:noRegion></affiliation></author><author><name sortKey="Zhu, Chun Xiang" uniqKey="Zhu C">Chun-Xiang Zhu</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge</s1><s2>Singapore 119260</s2><s3>SGP</s3><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 119260</wicri:noRegion></affiliation></author><author><name sortKey="Neoh, Koon Gee" uniqKey="Neoh K">Koon-Gee Neoh</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge</s1><s2>Singapore 119260</s2><s3>SGP</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 119260</wicri:noRegion></affiliation></author><author><name sortKey="Kang, En Tang" uniqKey="Kang E">En-Tang Kang</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge</s1><s2>Singapore 119260</s2><s3>SGP</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 119260</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0112960</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0112960 INIST</idno><idno type="RBID">Pascal:12-0112960</idno><idno type="wicri:Area/Main/Corpus">002097</idno><idno type="wicri:Area/Main/Repository">001642</idno><idno type="wicri:Area/Chine/Extraction">000432</idno></publicationStmt><seriesStmt><idno type="ISSN">0887-624X</idno><title level="j" type="abbreviated">J. polym. sci., Part A, Polym. chem.</title><title level="j" type="main">Journal of polymer science. Part A. Polymer chemistry</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectrum</term><term>Amine copolymer</term><term>Aromatic copolymer</term><term>Chemical coupling</term><term>Conjugated copolymer</term><term>Copolycondensation</term><term>Experimental study</term><term>Fluorene derivative copolymer</term><term>Graft polymers</term><term>ITO layers</term><term>Intramolecular charge transfer</term><term>Memory devices</term><term>Non volatile memory</term><term>Organic solution</term><term>Photoluminescence</term><term>Preparation</term><term>Solution polycondensation</term><term>Surface reaction</term><term>Suzuki coupling</term><term>Voltage current curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Fluorène dérivé copolymère</term><term>Amine copolymère</term><term>Copolymère conjugué</term><term>Copolymère aromatique</term><term>Polymère greffé</term><term>Préparation</term><term>Polycondensation solution</term><term>Copolycondensation</term><term>Copulation Suzuki</term><term>Copulation chimique</term><term>Réaction surface</term><term>Solution organique</term><term>Spectre absorption</term><term>Photoluminescence</term><term>Transfert charge intramoléculaire</term><term>Dispositif à mémoire</term><term>Mémoire non volatile</term><term>Couche ITO</term><term>Caractéristique courant tension</term><term>Etude expérimentale</term><term>Triphénylamine dérivé copolymère</term><term>Fluorène(9,9-bis[4-(diphénylamino)phényl]) copolymère</term><term>Fluorène(9,9-dihexyl) copolymère</term><term>Oxyde de graphène réduit</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A solution-processable PFTPA-convalently grafted reduced graphene oxide (RGO-PFTPA) was synthesized by the 1,3-dipolar cycloaddition of azomethine ylide. Bistable electrical switching and nonvolatile rewritable memory effects were demonstrated in a sandwich structure of indium tin oxide/ RGO-PFTPA/AI. The switch-on voltage of the as-fabricated device was around -1.4 V, and the ON/OFF-state current ratio was more than 10<sup>3</sup>. The ON-OFF transition process is reversible because the application of a high enough positive voltage can induce the reverse transfer of electrons, reducing the conductivity back to its initial OFF state. Both the OFF and ON states are accessible and very stable under a constant voltage stress of -1 V for up to 3 h, or under a pulse voltage stress of -1 V for up to 10<sup>8</sup> continuous read cycles (pulse period = 2 μs, pulse width = 1 μs).</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0887-624X</s0></fA01><fA02 i1="01"><s0>JPLCAT</s0></fA02><fA03 i2="1"><s0>J. polym. sci., Part A, Polym. chem.</s0></fA03><fA05><s2>50</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Push-Pull Archetype of Reduced Graphene Oxide Functionalized with Polyfluorene for Nonvolatile Rewritable Memory</s1></fA08><fA11 i1="01" i2="1"><s1>BIN ZHANG</s1></fA11><fA11 i1="02" i2="1"><s1>YU CHEN</s1></fA11><fA11 i1="03" i2="1"><s1>GANG LIU</s1></fA11><fA11 i1="04" i2="1"><s1>XU (Li-Qun)</s1></fA11><fA11 i1="05" i2="1"><s1>JUNNENG CHEN</s1></fA11><fA11 i1="06" i2="1"><s1>ZHU (Chun-Xiang)</s1></fA11><fA11 i1="07" i2="1"><s1>NEOH (Koon-Gee)</s1></fA11><fA11 i1="08" i2="1"><s1>KANG (En-Tang)</s1></fA11><fA14 i1="01"><s1>Shanghai Key Laboratory of Functional Materials Chemistry, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road</s1><s2>Shanghai 200237</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>The State Key Laboratory of ASIC & System, Fudan University, 220 Handan Road</s1><s2>Shanghai 200433</s2><s3>CHN</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge</s1><s2>Singapore 119260</s2><s3>SGP</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge</s1><s2>Singapore 119260</s2><s3>SGP</s3><sZ>6 aut.</sZ></fA14><fA20><s1>378-387</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>6199A1</s2><s5>354000506771460200</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0112960</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of polymer science. Part A. Polymer chemistry</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A solution-processable PFTPA-convalently grafted reduced graphene oxide (RGO-PFTPA) was synthesized by the 1,3-dipolar cycloaddition of azomethine ylide. Bistable electrical switching and nonvolatile rewritable memory effects were demonstrated in a sandwich structure of indium tin oxide/ RGO-PFTPA/AI. The switch-on voltage of the as-fabricated device was around -1.4 V, and the ON/OFF-state current ratio was more than 10<sup>3</sup>. The ON-OFF transition process is reversible because the application of a high enough positive voltage can induce the reverse transfer of electrons, reducing the conductivity back to its initial OFF state. Both the OFF and ON states are accessible and very stable under a constant voltage stress of -1 V for up to 3 h, or under a pulse voltage stress of -1 V for up to 10<sup>8</sup> continuous read cycles (pulse period = 2 μs, pulse width = 1 μs).</s0></fC01><fC02 i1="01" i2="X"><s0>001D09D02E</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F02</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Fluorène dérivé copolymère</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Fluorene derivative copolymer</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Fluoreno derivado copolímero</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Amine copolymère</s0><s2>NK</s2><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Amine copolymer</s0><s2>NK</s2><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Amina copolímero</s0><s2>NK</s2><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Copolymère conjugué</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Conjugated copolymer</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Copolímero conjugado</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Copolymère aromatique</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Aromatic copolymer</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Copolímero aromático</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Polymère greffé</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Graft polymers</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Préparation</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Preparation</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Preparación</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Polycondensation solution</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Solution polycondensation</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Policondensación solución</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Copolycondensation</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Copolycondensation</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Copolicondensación</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Copulation Suzuki</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Suzuki coupling</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Suzuki copulación</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Copulation chimique</s0><s5>12</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Chemical coupling</s0><s5>12</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Copulación química</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Réaction surface</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Surface reaction</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Reacción superficie</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Solution organique</s0><s5>15</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Organic solution</s0><s5>15</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Solución orgánica</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Spectre absorption</s0><s5>16</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Absorption spectrum</s0><s5>16</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Espectro de absorción</s0><s5>16</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Photoluminescence</s0><s5>17</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Photoluminescence</s0><s5>17</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Fotoluminiscencia</s0><s5>17</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Transfert charge intramoléculaire</s0><s5>18</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Intramolecular charge transfer</s0><s5>18</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Transferencia carga intramolecular</s0><s5>18</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Dispositif à mémoire</s0><s5>19</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Memory devices</s0><s5>19</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Mémoire non volatile</s0><s5>20</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Non volatile memory</s0><s5>20</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Memoria no volátil</s0><s5>20</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Couche ITO</s0><s5>21</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>ITO layers</s0><s5>21</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Caractéristique courant tension</s0><s5>22</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Voltage current curve</s0><s5>22</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Característica corriente tensión</s0><s5>22</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Etude expérimentale</s0><s5>23</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Experimental study</s0><s5>23</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Estudio experimental</s0><s5>23</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Triphénylamine dérivé copolymère</s0><s2>NK</s2><s4>INC</s4><s5>32</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Fluorène(9,9-bis[4-(diphénylamino)phényl]) copolymère</s0><s2>NK</s2><s4>INC</s4><s5>33</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Fluorène(9,9-dihexyl) copolymère</s0><s2>NK</s2><s4>INC</s4><s5>34</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Oxyde de graphène réduit</s0><s1>SUB</s1><s4>INC</s4><s5>35</s5></fC03><fN21><s1>086</s1></fN21><fN44 i1="01"><s1>PSI</s1></fN44><fN82><s1>PSI</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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